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Fig. 6. We simulated RINs and networks in which the coefficient of variation for IPSC amplitude, V_m, and g_leak were 0.2x, 0.1x, and 0.14x, respectively, where x is the "heterogeneity index." (Upper) Convergence in RINs, measured by the fraction of spikes on the fifth presentation of a stimulus that occur within 0.5 ms of a spike during the fourth presentation of the same stimulus, as a function of the heterogeneity index. (Lower) Effect of inhibitory coupling on synchrony in simulated networks, measured by the peak cross-correlation, as a function of the heterogeneity index.

Fig. 7. Cross-correlation from simulated networks in which inhibitory coupling is strong and fast (red line), strong and slow (blue line), or absent (black line).

Fig. 8. Gap junctions increase synchrony, but do not change the effects of inhibitory coupling. (Upper) Cross-correlation in simulated networks that include gap junctions between model neurons when inhibitory coupling is present (red line) or absent (black line). (Lower) Cross-correlation in simulated networks without gap junctions when inhibitory coupling is present (red line) or absent (black line).

Supporting Text

Each cell was modeled as a single compartment having an area of 7,603 mm², a leak current with a conductance of 88 mS/cm², and reversal potential of -72 mV, Na⁺, and K⁺ currents underlying action potentials (I_Na, I_K), a GABA_A receptor-mediated current, and an a-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid receptor-mediated current. Passive parameters were chosen to reproduce intrinsic properties of FS cells in vitro (n = 6 cells). The maximum conductances for voltage-dependent currents were g_Na = 50 mS/cm² and g_K = 5 mS/cm². Kinetics and other details for I_Na and I_K are in ref. 1. Unitary synaptic conductances were 16 and 10 nS for IPSCs and EPSCs, respectively. Other synaptic parameters (E_rev, t_decay, synaptic delay) were the same as in RIN experiments. In simulations that included gap junctions, pairs of neurons were electrically coupled with a probability of 0.25 or 0.5, and individual gap junctions had conductances of 1 nS. This arrangement corresponds to a total gap junction conductance of 2.5-5 nS per cell, consistent with observations that the total gap junction conductance per cell is the same order of magnitude as the leak conductance (2).

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